VTT Technical Research Centre of Finland Ltd. (VTT), Finland
VTT is a non-profit government organisation established by law and operating under the auspices of the Finnish Ministry of Employment and the Economy. VTT is a multitechnological research organisation providing high-end technology solutions and innovation services. VTT Group is the largest public applied research activity in Northern Europe with a staff of 2600 and turnover M€279.
Key experimental facilities of VTT for the project include a 2600 m2 clean room with extensive micro- and nanoelectronics fabrication capabilities including process lines for CMOS, superconductive devices, MEMS and silicon photonics. Equipment for heterogeneous integration, 100 keV electron beam lithography and CVD graphene growth and transfer also exist. In addition to the processing capabilities, the experimental facilities include also structural, rheological, electrical and optical characterization. The structural characterization includes several tools such as high resolution SEM, AFM and scanning µ-Raman. For electrical characterization we have several different research environments, including several low temperature measurement setups (down to 10 mK, up to 11 T), high frequency measurement systems up to 325 GHz at room temperature and power measurements from microwaves to infrared and CW THz spectrometer (0.2 – 2 THz). The facilities also include variable temperature (15-350 K) RF probe station with frequency up to 110 GHz.
Main tasks in MOS-QUITO:
- Si dot devices with thermal SiO2 gate dielectric
- Electrode development to control local magnetic fields on-chips
Previous experience, skills and facilities relevant to the tasks in MOS-QUITO:
- Expertise in micro and nanofabrication from MOSFETs and Si-SETs to superconducting circuits
- Expertise in semiconductor and tunnel junction device characterization
- State-of-the art nanofabrication facilities and 150 mm process line
- Cryogenic measurement facilities
Key persons related to the proposal at VTT:
Dr. Mika Prunnila is the leader of VTT’s nanoelectronics group consisting of 12 scientists. His research topics have included micro/nano device physics and fabrication, electron and heat transport, phononic effects, energy harvesting, electron-phonon interaction, double-gate SOI and single-electron transistors, MEMS devices, quantum devices, bio-sensors, bolometers and micro coolers. He has authored/co-authored more than 60 papers around these topics in peer reviewed scientific journals and has patents/patent applications in 10 families. In 2009 the Finnish Foundation for Technology Promotion awarded him “the young researcher of the year” prize. He has been involved in preparation and execution of numerous FP6 and FP7 projects (NEAR, EXTRA, SUBTLE, NANOPACK). In addition of MOS-QUITO he is currently participating FP7 integrated project QUANTIHEAT. He is also involved in several national research projects (funded by the Academy of Finland and Tekes) covering fields from IR detectors to quantum technologies.
Dr. Panu Koppinen is a research scientist at VTT. Prior joining VTT, he has worked as a post-doctoral researcher under Prof. Jason Petta at Princeton University, NJ, USA. He was involved in the QuEST program “Harnessing Quantum Entanglement in Semiconductor Circuits” funded by DARPA. After Princeton, Dr. Koppinen worked as a guest researcher in Quantum Processes and Metrology group led by Dr. Garnett Bryant at NIST (National Institute of Standards and Technology), Gaithersburg, USA. He has been involved in research projects developing SINIS coolers and their integration to nanomechanical systems, the main achievement being cooling of both electrons and phonons in suspended nanomechanical beam. He has also worked on silicon based semiconductor quantum dot systems and single electron devices and studied their feasibility on quantum information and metrology. Dr. Koppinen joined VTT in August 2012, and is an author/co-author in 17 scientific publications.
Dr. Andrey Shchepetov received his MSc degrees from Saratov State University in 2003, University Paris 5 in 2004 and University of Lille in 2005. He obtained PhD degree in Microelectronics at the Institute of Electronics, Microelectronics and Nanotechnology of Lille (France) in 2008. After joining VTT in February 2009 he worked on several fundamental and applied research topics including Si nanodevices, graphene development methods, thin film structures and energy management systems. He achieved several world state-of-the-art results such as: ultrathin free-standing silicon membranes with controlled stress which became a versatile platform for various physical studies (thermal, mechanical); piezoelectric based vibrational energy harvester with world leading power density and unique wide-band response. His expertise and responsibilities include device design, cleanroom process development, process integration, device fabrication and characterisation, electron beam lithography and process equipment maintenance. His research results have led to over 20 publications in scientific journals.