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Project Publications

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand & S. De Franceschi. Nature Communicationsvolume 10, Article number: 2776 (2019).
Link / arXiv

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
E. Ferraro, M. Fanciulli and M. De Michielis, “Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots”, Physical Review B 2019, 100.035310.
Link / arXiv

Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115 (2019).
Link / arXiv

Towards scalable quantum computing based on silicon spin
T Meunier, L Hutin, B Bertrand, Y Thonnart, G Pillonnet, G Billiot, … 2019 Symposium on VLSI Technology, T30-T31 (2019).
Link

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
H Bohuslavskyi, AGM Jansen, S Barraud, V Barral, M Cassé, L Le Guevel, … IEEE Electron Device Letters 40 (5), 784-787 (2019).
Link / arXiv

A CMOS dynamic random access architecture for radio-frequency readout of quantum devices 
S Schaal, A Rossi, VN Ciriano-Tejel, TY Yang, S Barraud, JJL Morton, MF Gonzalez-Zalba Nature Electronics 2 236–242 (2019).
Link / arXiv

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M Marcus, Ferdinand Kuemmeth. Nano Lett.19, 5628 (2019).
Link / arXiv

Gate-based high fidelity spin readout in a CMOS device
Matias Urdampilleta, David J Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier. Nature Nano. 14, 737 (2019).
Link  / arXiv

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet. IEEE International Electron Devices Meeting proceedings (2019).

Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Andrea Corna, Leeo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Lavieville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, and Marc Sanquer. npj Quantum Information 4, 6 (2018).
Link / arXiv

Towards scalable silicon quantum computing
M Vinet, L Hutin, B Bertrand, S Barraud, JM Hartmann, YJ Kim, … 2018 IEEE International Electron Devices Meeting (IEDM), 6.5. 1-6.5. 4 (2018).
Link

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L Bourdet, L Hutin, B Bertrand, A Corna, H Bohuslavskyi, A Amisse, … IEEE Transactions on Electron Devices 65 (11), 5151-5156 (2018).
Link

Si MOS technology for spin-based quantum computing
L Hutin, B Bertrand, R Maurand, A Crippa, M Urdampilleta, YJ Kim, … 2018 48th European Solid-State Device Research Conference (ESSDERC), 12-17 (2018).
Link

Cryogenic characterization of 28-nm FD-SOI ring oscillators with energy efficiency optimization
H Bohuslavskyi, S Barraud, V Barral, M Cassé, L Le Guevel, L Hutin, … IEEE Transactions on Electron Devices 65 (9), 3682-3688 (2018).
Link / arXiv

From Electron Pumps to Spin Quantum Bits in Silicon
X Jehl, R Maurand, A Crippa, A Corna, YM Niquet, B Bertrand, L Hutin, … 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 1-2 (2018).
Link

All-electrical control of a hybrid electron spin/valley quantum bit in SOI CMOS technology
L Hutin, L Bourdet, B Bertrand, A Corna, H Bohuslavskyi, A Amisse, … 2018 IEEE Symposium on VLSI Technology, 125-126 (2018).
Link

Electric-field tuning of the valley splitting in silicon corner dots
David J Ibberson, Léo Bourdet, José C Abadillo-Uriel, Imtiaz Ahmed, Sylvain Barraud, María J Calderón, Y-M Niquet, M Fernando Gonzalez-Zalba. App. Phys. Lett. 113, 053104 (2018).
Link / arXiv

Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits
Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi. Phys. Rev. Lett. 120, 137702 (2018).
Link / arXiv

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
J Mansir, P Conti, Z Zeng, JJ Pla, P Bertet, MW Swift, CG Van de Walle, MLW Thewalt, B Sklenard, Y-M Niquet, JJL Morton Phys Rev Lett 120 167701 (2018) [+SOI] .
Link / arXiv

Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
S Schaal, S Barraud, JJL Morton, MF Gonzalez-Zalba Phys Rev App (Editors’ suggestion) 9 054016 (2018) .
Link / UCL
Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
I Ahmed, A Chatterjee, S Barraud, JJL Morton, JA Haigh, and MF Gonzalez-Zalba Nature Communications Physics 1 66 (2018) .
Link / arXiv

Strain-induced spin resonance splittings in silicon devices
JJ Pla, A Bienfait, G Pica, J Mansir, FA Mohiyaddin, Z Zeng, YM Niquet, A Morello, T Schenkel, JJL Morton and P Bertet Phys Rev App 9 044014 (2018).
Link / arXiv

Radio-frequency capacitive gate-based sensing
I Ahmed, JA Haigh, S Schaal, S Barraud, Y Zhu, C-M Lee, M Amado, JWA Robinson, A Rossi, JJL Morton and MF Gonzalez-Zalba Phys Rev App (Editors’ suggestion) 10 014018 (2018) .
Link / arXiv

A silicon-based single-electron interferometer coupled to a fermionic sea
A Chatterjee, SN Shevchenko, S Barraud, RM Otxoa, F Nori, JJL Morton, MF Gonzalez-Zalba Phys Rev B 97 045405 (2018) .
Link / arXiv

Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
E. Ferraro, M. Fanciulli and M. De Michielis, “Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions”, Advanced Quantum Technologies 2018, 1800040.
Link / arXiv

Gate fidelity comparison in semiconducting spin qubit implementations
E. Ferraro, M. Fanciulli and M. De Michielis, “Gate fidelity comparison in semiconducting spin qubit implementations”, 2018 IOP Journal of Physics Communication 2 115022.
Link / arXiv

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
E. Ferraro, M. Fanciulli and M. De Michielis, “Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises”, Quantum Inf Process (2018) 17:130
Link / arXiv

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
E. Ferraro, M. Fanciulli and M. De Michielis Quantum Inf Process (2017) 16:277
Link / arXiv

Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor 
A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba, “Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor”,     Appl. Phys. Lett. 110, 212101 (2017)
LinkarXiv

Pauli spin blockade in CMOS double quantum dot devices
D Kotekar‐Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, L Hutin, M Vinet, X Jehl, S De Franceschi, M Sanquer, “Pauli spin blockade in CMOS double quantum dot devices”, Phys. Status Solidi B 254, No. 3, 1600581 (2017)
LinkarXiv

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O Orlov, Patrick Fay, Romain Laviéville, Sylvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl, “Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry”, Nano Lett, 17(2), 1001−1006 .(2017)
LinkarXiv

Quantum and Tunnelling Capacitance in Charge and Spin Qubits
Mizuta R., Gonzalez-Zalba M.F. et al. Phys. Rev. B 95, 045414 (2017)
Link / arXiv

SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, A Corna, D Kotekar-Patil, S Barraud, X Jehl, Y-M Niquet, M Sanquer, M Vinet, “SOI technology for quantum information processing” Electron Devices Meeting (IEDM), IEEE International (2016).
Link

A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi, « A CMOS silicon spin qubit”, Nature communications 7, 13575 (2016)
Link / arXiv

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer, “Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction”, Appl. Phys. Lett. 109, 193101 (2016)
Link / arXiv

Si CMOS platform for quantum information processing 
L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, S Barraud, S De Franceschi, M Sanquer, M Vinet, “Si CMOS platform for quantum information processing”, 2016 IEEE Symposium on VLSI Technology (2016)
Link

Cryogenic operation of SOI electron pumps and ring oscillators
P Clapera, X Jehl, L Hutin, S Barraud, A Valentian, S De Franceschi, M Sanquer, M Vinet, “Cryogenic operation of SOI electron pumps and ring oscillators”, Silicon IEEE, (2016)
Link

SOI platform for spin qubits
S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, M Sanquer, R Lavieville, L Hutin, S Barraud, M Vinet, Y-M Niquet, “SOI platform for spin qubits”, IEEE (2016)
Link

Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A.C. Betz, M.F. Gonzalez-Zalba et al. “Reconfigurable quadruple quantum dots in a silicon nanowire transistor”  App. Phys Lett 108 203108 (2016)
Link / arXiv