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Project Publications

Gate-reflectometry dispersive readout of a spin qubit in silicon
A. Crippa et al. (2018)
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All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Bourdet et al., IEEE Transactions on Electron Devices, vol. 65, no. 11, Nov. 2018
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Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits
A. Crippa et al., Phys. Rev. Lett. 120, 137702 (2018)
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Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency Optimization
H. Bohuslavskyi et al., IEEE Transactions on Electron Devices, vol. 65, no. 9, Sept. 2018
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All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
L. Bourdet et al., Phys. Rev. B 97, 155433 (2018)
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Electrical manipulation of semiconductor spin qubits within the g-matrix formalism
B. Venitucci et al., Phys. Rev. B 98, 155319 (2018)
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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits
V. Mazzocchi et al., Journal of Crystal Growth (2018)
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Magnon-photon coupling in a non-collinear magnetic insulator Cu2OSeO3
L. V. Abdurakhimov et al. (2018)
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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
S. Schaal et al. (2018)
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Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain
J. Mansir et al., Phys. Rev. Lett. 120, 167701 (2018)
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Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
S. Schaal et al., Phys. Rev. Applied 9, 054016 (2018)
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Electric-field tuning of the valley splitting in silicon corner dots
D. J. Ibberson et al., Appl. Phys. Lett. 113, 053104 (2018)
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Primary thermometry of a single reservoir using cyclic electron tunneling to a quantum dot
I. Ahmed et al., NPJ Communication Physics 1, 66 (2018)
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A silicon-based single-electron interferometer coupled to a fermionic sea
A. Chatterjee et al., Phys. Rev. B 97, 045405 (2018)
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Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
A. Beckers et al., IEEE Journal of the Electron Devices Society, vol. 6, 2018
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Cryogenic MOS Transistor Model
A. Beckers et al., IEEE Transactions on Electron Devices, vol. 65, no. 9, Sept. 2018
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Revised theoretical limit of the subthreshold swing in field-effect transistors
A. Beckers et al.  (2018)
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Characterization and Modeling of 28-nm FDSOI CMOS Technology Down to 4.2 K
A. Beckers et al., Accepted for publication in Elsevier Solid-State Electronics (2018)
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Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction
E. Mykkänen et al.  (2018)
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Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
E. Ferraro et al., J. Phys. Commun. 2 115022 (2018)
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Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
E. Ferraro et al., Accepted for publication on Advanced Quantum Technologies (2018)
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Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
E. Ferraro et al., Quantum Inf Process, 17:130 (2018)
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Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
E. Ferraro, M. Fanciulli and M. De Michielis, Advanced Quantum Technologies 2018, 1800040.
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Gate fidelity comparison in semiconducting spin qubit implementations
E. Ferraro, M. Fanciulli and M. De Michielis, 2018 IOP Journal of Physics Communication 2 115022.
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Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
E. Ferraro, M. Fanciulli and M. De Michielis, Quantum Inf Process (2018) 17:130
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Side-wall spacer passivated sub-µm Josephson junction fabrication process
L. Grönberg et al., Supercond. Sci. Technol. 30 125016 (2017)
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Superconducting MoSi nanowires
J. S. Lehtinen et al., Supercond. Sci. Technol. 31 015002 (2017)
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Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
E. Ferraro, M. Fanciulli and M. De Michielis Quantum Inf Process (2017) 16:277
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Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor 
A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba, Appl. Phys. Lett. 110, 212101 (2017)
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Pauli spin blockade in CMOS double quantum dot devices
D Kotekar‐Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, L Hutin, M Vinet, X Jehl, S De Franceschi, M Sanquer, Phys. Status Solidi B 254, No. 3, 1600581 (2017)
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Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O Orlov, Patrick Fay, Romain Laviéville, Sylvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl, Nano Lett, 17(2), 1001−1006 .(2017)
Link    arXiv

Quantum and Tunnelling Capacitance in Charge and Spin Qubits
Mizuta R., Gonzalez-Zalba M.F. et al. Phys. Rev. B 95, 045414 (2017)
Link    arXiv

SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, A Corna, D Kotekar-Patil, S Barraud, X Jehl, Y-M Niquet, M Sanquer, M Vinet, Electron Devices Meeting (IEDM), IEEE International (2016).
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A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi, Nature communications 7, 13575 (2016)
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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer, Appl. Phys. Lett. 109, 193101 (2016)
Link    arXiv

Si CMOS platform for quantum information processing 
L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, S Barraud, S De Franceschi, M Sanquer, M Vinet, 2016 IEEE Symposium on VLSI Technology (2016)
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Cryogenic operation of SOI electron pumps and ring oscillators
P Clapera, X Jehl, L Hutin, S Barraud, A Valentian, S De Franceschi, M Sanquer, M Vinet, “Cryogenic operation of SOI electron pumps and ring oscillators”, Silicon IEEE, (2016)
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SOI platform for spin qubits
S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, M Sanquer, R Lavieville, L Hutin, S Barraud, M Vinet, Y-M Niquet, “SOI platform for spin qubits”, IEEE (2016)
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Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A.C. Betz, M.F. Gonzalez-Zalba et al., App. Phys Lett 108 203108 (2016)
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