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Project Publications

Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
E. Ferraro, M. Fanciulli and M. De Michielis, “Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions”, Advanced Quantum Technologies 2018, 1800040.
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Gate fidelity comparison in semiconducting spin qubit implementations
E. Ferraro, M. Fanciulli and M. De Michielis, “Gate fidelity comparison in semiconducting spin qubit implementations”, 2018 IOP Journal of Physics Communication 2 115022.
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Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
E. Ferraro, M. Fanciulli and M. De Michielis, “Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises”, Quantum Inf Process (2018) 17:130
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Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
E. Ferraro, M. Fanciulli and M. De Michielis Quantum Inf Process (2017) 16:277
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Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor 
A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba, “Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor”,     Appl. Phys. Lett. 110, 212101 (2017)
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Pauli spin blockade in CMOS double quantum dot devices
D Kotekar‐Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, L Hutin, M Vinet, X Jehl, S De Franceschi, M Sanquer, “Pauli spin blockade in CMOS double quantum dot devices”, Phys. Status Solidi B 254, No. 3, 1600581 (2017)
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Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O Orlov, Patrick Fay, Romain Laviéville, Sylvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl, “Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry”, Nano Lett, 17(2), 1001−1006 .(2017)
Link    arXiv

Quantum and Tunnelling Capacitance in Charge and Spin Qubits
Mizuta R., Gonzalez-Zalba M.F. et al. Phys. Rev. B 95, 045414 (2017)
Link    arXiv

SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, A Corna, D Kotekar-Patil, S Barraud, X Jehl, Y-M Niquet, M Sanquer, M Vinet, “SOI technology for quantum information processing” Electron Devices Meeting (IEDM), IEEE International (2016).
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A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi, « A CMOS silicon spin qubit”, Nature communications 7, 13575 (2016)
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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer, “Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction”, Appl. Phys. Lett. 109, 193101 (2016)
Link    arXiv

Si CMOS platform for quantum information processing 
L Hutin, R Maurand, D Kotekar-Patil, A Corna, H Bohuslavskyi, X Jehl, S Barraud, S De Franceschi, M Sanquer, M Vinet, “Si CMOS platform for quantum information processing”, 2016 IEEE Symposium on VLSI Technology (2016)
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Cryogenic operation of SOI electron pumps and ring oscillators
P Clapera, X Jehl, L Hutin, S Barraud, A Valentian, S De Franceschi, M Sanquer, M Vinet, “Cryogenic operation of SOI electron pumps and ring oscillators”, Silicon IEEE, (2016)
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SOI platform for spin qubits
S De Franceschi, R Maurand, A Corna, D Kotekar-Patil, X Jehl, M Sanquer, R Lavieville, L Hutin, S Barraud, M Vinet, Y-M Niquet, “SOI platform for spin qubits”, IEEE (2016)
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Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A.C. Betz, M.F. Gonzalez-Zalba et al. “Reconfigurable quadruple quantum dots in a silicon nanowire transistor”  App. Phys Lett 108 203108 (2016)
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