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Project Publications

SOI technology for quantum information processing
S De Franceschi, L Hutin, R Maurand, L Bourdet, H Bohuslavskyi, A Corna, D Kotekar-Patil, S Barraud, X Jehl, Y-M Niquet, M Sanquer, M Vinet, “SOI technology for quantum information processing” Electron Devices Meeting (IEDM), IEEE International (2016).
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Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer, “Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction”, Appl. Phys. Lett. 109, 193101 (2016)
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A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, R.Laviéville, L.Hutin, S.Barraud, M.Vinet, M.Sanquer and S.De Franceschi. Nature Communications 7,13575 (2016)
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Superconducting MoSi Nanowires
J. S. Lehtinen, A. Kemppinen, E. Mykkänen, M. Prunnila, A. J. Manninen
Superconductor Science and Technology 31, 1 (2017)
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Quantum and tunneling capacitance in charge and spin qubits
R. Mizuta, R. M. Otxoa, A. C. Betz, and M. F. Gonzalez-Zalba Phys Rev B 95 045414 (2017)
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Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
E. Ferraro, M. Fanciulli and M. De Michielis Quantum Inf Process (2017) 16:277
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Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor 
A. Rossi, R. Zhao, A. S. Dzurak, M. F. Gonzalez-Zalba, “Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor”,     Appl. Phys. Lett. 110, 212101 (2017)
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Pauli spin blockade in CMOS double quantum dot devices
D Kotekar‐Patil, A Corna, R Maurand, A Crippa, A Orlov, S Barraud, L Hutin, M Vinet, X Jehl, S De Franceschi, M Sanquer, “Pauli spin blockade in CMOS double quantum dot devices”, Phys. Status Solidi B 254, No. 3, 1600581 (2017)
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Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot 
Andrea Corna, Leeo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Lavieville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, and Marc Sanquer. npj Quantum Information 4, 6 (2018).
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Electric-field tuning of the valley splitting in silicon corner dots
David J Ibberson, Léo Bourdet, José C Abadillo-Uriel, Imtiaz Ahmed, Sylvain Barraud, María J Calderón, Y-M Niquet, M Fernando Gonzalez-Zalba. App. Phys. Lett. 113, 053104 (2018).
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Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits
Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi. Phys. Rev. Lett. 120, 137702 (2018).
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Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
J Mansir, P Conti, Z Zeng, JJ Pla, P Bertet, MW Swift, CG Van de Walle, MLW Thewalt, B Sklenard, Y-M Niquet, JJL Morton Phys Rev Lett 120 167701 (2018) [+SOI] .
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Conditional Dispersive Readout of a CMOS Single-Electron Memory Cell
S Schaal, S Barraud, JJL Morton, MF Gonzalez-Zalba Phys Rev App (Editors’ suggestion) 9 054016 (2018) .
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Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
I Ahmed, A Chatterjee, S Barraud, JJL Morton, JA Haigh, and MF Gonzalez-Zalba Nature Communications Physics 1 66 (2018) .
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Strain-induced spin resonance splittings in silicon devices
JJ Pla, A Bienfait, G Pica, J Mansir, FA Mohiyaddin, Z Zeng, YM Niquet, A Morello, T Schenkel, JJL Morton and P Bertet Phys Rev App 9 044014 (2018).
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Gate fidelity comparison in semiconducting spin qubit implementations
E. Ferraro, M. Fanciulli and M. De Michielis, “Gate fidelity comparison in semiconducting spin qubit implementations”, 2018 IOP Journal of Physics Communication 2 115022.
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Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises
E. Ferraro, M. Fanciulli and M. De Michielis, “Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises”, Quantum Inf Process (2018) 17:130
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All-electrical manipulation of silicon spin qubits with tunable spin-valley mixing
Léo Bourdet and Yann-Michel Niquet, Physical Review B, 97, 155433, 2018.
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Electrical manipulation of semiconductor spin qubits within the g -matrix formalism
Benjamin Venitucci, Léo Bourdet, Daniel Pouzada and Yann-Michel Niquet, Physical Review B 98, 155319, 2018.
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A silicon-based single-electron interferometer coupled to a fermionic sea
Anasua Chatterjee, Sergey N. Shevchenko, Sylvain Barraud, Ruben M. Otxoa, Franco Nori, John J. L. Morton, M. Fernando Gonzalez-Zalba
Phys. Rev. B 97, 045405 (2018)
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Radio-Frequency Capacitive Gate-Based Sensing
Imtiaz Ahmed, James A. Haigh, Simon Schaal, Sylvain Barraud, Yi Zhu, Chang-min Lee, Mario Amado, Jason W. A. Robinson, Alessandro Rossi, John J. L. Morton, and M. Fernando Gonzalez-Zalba Phys. Rev. Applied 10, 014018 (2018)
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All-electrical control of a hybrid electron spin/valley quantum bit in SOI CMOS technology
L Hutin, et al. 2018 IEEE Symposium on VLSI Technology, 125-126 (2018).
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Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
E. Ferraro, M. Fanciulli and M. De Michielis, Adv. Quantum Technol. 1, 1800040 (2018).
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Cryogenic characterization of 28-nm FD-SOI ring oscillators with energy efficiency optimization
H Bohuslavskyi, et al., IEEE Transactions on Electron Devices 65 (9), 3682-3688 (2018)
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Towards scalable silicon quantum computing
M Vinet, et al., 2018 IEEE International Electron Devices Meeting (IEDM), 6.5.1-6.5. 4 (2018).
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Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
A. Beckers, F. Jazaeri, and C. Enz, “,” IEEE Journal of the Electron Devices Society, vol. 6, pp. 1007–1018, 2018.
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Design-oriented modeling of 28 nm FDSOI CMOS technology down to 4.2 K for quantum computing
A. Beckers, F. Jazaeri, H. Bohuslavskyi, L. Hutin, S. D. Franceschi, and C. Enz, in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2018, pp. 1–4.
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Cryogenic MOS Transistor Model
A. Beckers, F. Jazaeri, and C. Enz, IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 3617–3625, Sep. 2018.
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Efficient thermionic operation and phonon isolation by a semiconductor-superconductor junction
Emma Mykkänen, Janne S. Lehtinen, Leif Grönberg, Andrey Shchepetov, Andrey V. Timofeev, David Gunnarsson, Antti Kemppinen, Antti J. Manninen and Mika Prunnila, arXiv:1809.02994, 2018
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Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Crippa, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, S. De Franceschi, X. Jehl and M. Sanquer Book Chapter in: Deleonibus, S. (Ed.). (2018). Emerging Devices for Low-Power and High-Performance Nanosystems. New York: Pan Stanford.
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Electrical manipulation of semiconductor spin qubits within the g -matrix formalism
Benjamin Venitucci, Léo Bourdet, Daniel Pouzada and Yann-Michel Niquet, Physical Review B 98, 155319, 2018.
Publication link / Open access link

Electron spin resonance of P Donors in isotopically purified Si detected by contactless photoconductivity
P Ross, BC Rose, CC Lo, MLW Thewalt, AM Tyryshkin, SA Lyon and JJL Morton, Physical Review Applied 11, 054014, 2019
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Low-temperature tunable radio-frequency resonator for sensitive dispersive readout of nanoelectronics devices.
D. J. Ibberson, L. A. Ibberson, G. Smithson, J. A. Haigh, S. Barraud, M. F. Gonzalez-Zalba, App. Phys. Lett. 114 123501 (2019)
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Small-signal equivalent circuit for double quantum dots at low frequencies
Estreli M., Otxoa R.M., Gonzalez-Zalba M.F., App. Phys. Lett. (2019)
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A quantum interference capacitor base on double passage Landau-Zener-Stuckelberg-Majorana Interferometry
Otxoa R. M., Chatterjee A., Shevchenko S. N., Barraud S., Nori F., Gonzalez-Zalba M.F. Phys Rev B (2019)
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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
Simon Schaal, Alessandro Rossi, Virginia N Ciriano-Tejel, Tsung-Yeh Yang, Sylvain Barraud, John JL Morton, M Fernando Gonzalez-Zalba, Nature Electronics, 2, 236 (2019)
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Magnon-photon coupling in a non-collinear magnetic insulator Cu2OSeO3
L.V. Abdurakhimov, S. Khan, N. A. Panjwani, J. D. Breeze, M. Mochizuki, S. Seki, Y. Tokura, J. J. L. Morton, and H. Kurebayashi, Physical Review B 99, 140401(R), 2019
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99.992% 28Si CVD-grown epilayer on 300mm substrates for large scale integration of silicon spin qubits
V. Mazzocchi, P.G. Sennikov, A.D. Bulanov, M.F. Churbanov, B. Bertrand, L. Hutin, J.P. Barnes, M.N. Drozdov, J.M. Hartmann and M. Sanquer, Journal of Crystal Growth 509, 1-7, 2019.
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Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T.-Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y.-M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet
IEEE International Electron Devices Meeting proceedings (2019)
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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening
H Bohuslavskyi, et al., IEEE Electron Device Letters 40 (5), 784-787 (2019)
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Cryogenic MOSFET Threshold Voltage Model
A. Beckers, F. Jazaeri, and C. Enz, (Best Student Paper Award) in 2019 49th European Solid-State Device Research Conference (ESSDERC), 2019
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Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, R. Laviéville, L. Hutin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand & S. De Franceschi. Nature Communicationsvolume 10, Article number: 2776 (2019).
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Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
E. Ferraro, M. Fanciulli and M. De Michielis, “Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots”, Physical Review B 2019, 100.035310.
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Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
A Beckers, F Jazaeri, H Bohuslavskyi, L Hutin, S De Franceschi, C Enz Solid-State Electronics 159, 106-115 (2019).
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Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate
Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M Marcus, Ferdinand Kuemmeth. Nano Lett.19, 5628 (2019).
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Bandwidth-Limited and Noisy Pulse Sequences for Single Qubit Operations in Semiconductor Spin Qubits
E. Ferraro, M. Fanciulli and M. De Michielis, Entropy 21 (11), 1042, 2019
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Small-signal equivalent circuit for double quantum dots at low frequencies
Estreli M., Otxoa R.M., Gonzalez-Zalba M.F., App. Phys. Lett. (2019)
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Analysis on Noise Requirements of RF Front-End Circuits for Spin Qubit Readout
Y. Peng, A. Ruffino, E. Charbon ICNF (2019)
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Gate-based high fidelity spin readout in a CMOS device
Matias Urdampilleta, David J Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier, Nature Nano. 14, 737 (2019)
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