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MOS-quito Project’s Overview

This project is positioned in the most forefront area of Information and Communication Technology, where new computing paradigms are targeted. Here we deal with the revolutionary concept of quantum computation. We propose to take one of the most promising approaches to quantum computing and implement it onto an industrial CMOS platform. Within the three-year timeframe of this project, we can accomplish the first important step of this implementation: the realisation of the first CMOS-based qubit, the basic building block of a quantum computer. To this aim, we shall take advantage of a state-of-the-art silicon-on-insulator technology available at the 300-mm CMOS platform of CEA-LETI.

A qubit device embeds a quantum two-level system encoding an elementary bit of quantum information. Our type of qubit relies on a spin degree of freedom of either electronic or nuclear nature. It was recently shown that a spin in silicon can hold a bit of quantum information for very long times. This makes it an attractive option for the realisation of a quantum computer. A variety of spin qubits in silicon have already been proposed and experimentally demonstrated in academic research laboratories. The central aim of this project is to show that such high-fidelity spin qubits can be manufactured in silicon using industry-standard CMOS processes within a large-scale nanofabrication facility. Our approach is based one a single, versatile building block, which can be tuned to operate in different regimes giving up to five different qubit realisations in one device. The performance of these different qubit will be benchmarked against key criteria such as fidelity, speed and suitability for large-scale integration.

Design and modelling will be used alongside measured performance metrics to identify optimal large-scale architectures, while control tools will be developed which can be applied to scaled qubit arrays. In addition, we shall develop a toolkit of CMOS-based, classical devices (low-noise amplifiers, rf generators and multiplexers) to be used as low-temperature peripheral electronics for improved qubit control and readout. By sharing the same CMOS technology, qubits and peripheral electronics could even lie close to each other on the same chip. This unique opportunity could be particularly helpful in the development of fast readout circuitry.

Summary of the main goals and related work packages (WPs):
  • Fabricate spin qubit devices using 300-mm SOI technology (WP 2)
  • Implement and compare different qubit schemes (WP 3 & 5)
  • Optimize qubit design for large-scale integration (WP 3 & 5)
  • Develop a quantum control toolbox suitable for large-scale integrated qubits (WP4)
  • Develop low-temperature peripheral electronics for improved qubit control (WP6)