banner top


Hitachi Cambridge Laboratory (HIT) UK

The Hitachi Cambridge Laboratory, (HCL) is part of the R&D Centre of Hitachi Europe Ltd, and shares a building and facilities with the Microelectronics Research Centre of Cambridge University. The aim of the laboratory is to develop new concepts for future micro-, nano- and opto-electronics, as well as future quantum information processing tools. HCL is a world leader in the development of nano-scale electronic devices, and has a track record of developing new device concepts based on the physics of electron transport in nanostructures. Outstanding achievements are the world-first demonstrations of single electron memory cells and single electron logic circuits, and the first observation of the Spin Hall effect in a modulation doped 2DHG structure.

Key facilities:
Electrical and optical characterization/measurement: Ti-Sapphire femtosecond pulsed laser systems; Dilution refrigerators (dry and wet) with magnetic fields up to 18 T; 4.2K, 1.6K and 300mK cryostats containing electromagnets; Optical-access and high frequency cryostats containing electromagnets, Low temperature magneto-optical Kerr microscopy; Room temperature and cryogenic probing; Ultra-high resolution field emission SEMs, STM and AFM.

Fabrication: Device-processing laboratories including optical lithography, RIE, sputter coating, thin-film evaporation, wet chemistry, wafer dicing, wire bonding and optical microscopy; Electron-beam laboratories, including high resolution e-beam lithography.

Simulation: commercial software packages such as ‘Atlas’ device simulator and micromagnetic simulator. In-house integrated single-electron device and circuit simulators.

Main tasks in MOS-QUITO:

HIT will lead WP3 “CMOS spin qubit implementations and benchmarking” and contribute to WP4 and WP6. HIT has a strong background in nano-scale electronics and single-electron device characterisation and will use its facilities to carry out low-temperature measurements of the CMOS silicon nanowire transistors.
The group has strong ties to groups in the University of Cambridge, in particular to the spintronics group of A.J. Ferguson of the Microelectronics Research Centre. Further collaborators include e.g. the group of Dr. B. Plaçais of the Laboratoire Pierre Aigrain (Ecole Normale Supérieure, Paris, France) who excel in mesocopic and single-electron transport. In this project HCL will keep close ties with the participants of WP3 and WP4, as well as aid the architecture work of WP5.

Key persons related to the proposal at HIT:


Dr. M. Fernando Gonzalez-Zalba is a Senior  Research Scientist at the Hitachi Cambridge Laboratory. He joined HCL after receiving his PhD from the University of Cambridge in 2013. During his PhD he worked on developing high-frequency techniques to detect single atom impurities in silicon nano-structures (e.g. Nano Letters 14(10), 5672 (2014)). He continued to work in silicon nano-structures after joining HCL, where he is investigating state-of-the-art silicon nanowire transistors in the framework of the FP7 program TOLOP (Agreement No. 318397), co-manages the project and leads one of the work packages. He recently demonstrated a gate-based charge sensor for silicon QIP which operates at unprecedented levels of sensitivity (Nature Comm. 6, 6084 (2015)).

Dr. David Williams is the chief research scientist and laboratory manager at the Hitachi Cambridge Laboratory, of which he was a founding member in 1989, and is an honorary Professor at Nottingham University. His research interests have included three dimensional silicon circuit structures, novel silicon memory devices, mesoscopic quantum electron transport, advanced electron microscopy, coherent electron-phonon interactions and semiconductor-superconductor hybrids. His current main projects cover quantum information processing, nanospintronics and low power devices. He is author or co-author of over 150 papers and holds 45 patents.