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CNR-IMM (Italy)

Istituto per la microelettronica e microsistemi (CNR) - Italy

The CNR-IMM, UOS of Agrate Brianza – Laboratorio MDM belongs to the Institute for Microelectronics and Microsystems (IMM) of the National Research Council (CNR). The Laboratory is located in the ST Microelectronics and Micron site in Agrate Brianza, Milan, Italy, two of the major microelectronic industry in the world. The CNR-IMM MDM Laboratory is a state-of-the-art facility focused on the investigation of the structural, electrical, optical and magnetic properties of materials for present and future nanoelectronics, spintronics, and neuroelectronics. Among the available facilities those more related to the project include:

Electrical set-up for I-V, stability diagrams of devices stimulated with DC and AC electric pulses (min 1 ns) and RF pulses (up to 40 GHz) and held into a 3He cryostat (down to 300 mK) featuring a superconducting magnet (up to 12 T).

Main tasks in MOS-QUITO:
  • MDM will be involved in WP1, WP3, WP4, WP5 and WP7.
  • MDM will lead WP5 “Modelling of the physical qubit” where its work is related to the modelling of the different qubit types considered in this project and to propose a scalable quantum computing architecture with fault-tolerant features.
  • MDM will contribute to WP3 addressing the implementation and benchmarking of one of the different qubit types: the hybrid qubit. In WP4.
  • MDM will evaluate the spin manipulation tool for the hybrid qubit.
Previous experience, skills and facilities relevant to the tasks in MOS-QUITO:
  • Simulation of silicon nanodevices based on FEM codes
  • Modeling of qubit systems and searching algorithms for quantum gate sequences
  • Expertise in DC electrical measurements at low temperature and high magnetic field
Key persons related to the proposal at MDM:

Prof. Marco Fanciulli is the head of the MDM Lab and has contributed to the develop­ment of nanoelectronics: materials and processes for ultra-scaled nanoelectronics devices and for innovative non-volatile memories, single atom electronics, silicon nanostructures; spintronics: magnetic tunnel junctions, diluted magnetic semiconductors, donors in silicon for classical and quantum information processing, and neuro-electronics: EOSC devices for neuro-sensors. Marco Fanciulli has published more than 350 technical papers and edited two books in the area of the growth and characterization of materials for microelectronics, nanoelectronics and spintronics and has been given 30 invited talks. He has more than 25 years’ experience in the field of semiconductor science and technology and has coordinated several national and international projects.

Dr. Marco De Michielis is a post-doc fellow at the MDM Lab. He received his PhD degree in electronic engineering at the University of Udine and at INP Grenoble in 2009. He has experience in modeling and simu­la­­tion of low-dimensional devices for ultimate nano-electronics and quantum computation. He worked and partially developed simulators based on Full Configuration Interaction methods, Density Functional methods, k*p techniques, Constant Interaction models and Monte Carlo techniques. In his career, he also had experience in static and dynamic electrical characterization of MOSFET devices at room temperatures. Marco De Michielis has published more than 20 technical papers in the area of computational electronics and quantum computation.