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CEA Commissariat à l’énergie atomique et aux énergies alternatives, France

CEA-LETI is the Laboratory for Electronics & Information Technology of the French Atomic Energy Agency. Based in Grenoble, it is one of the largest applied research laboratories in Europe in the field of electronics and micro/nanotechnology. It employs 1,700 scientists and engineers including 240 Ph.D. students and 200 assignees from partner companies. CEA-Leti mainly aims at helping companies to increase their competitiveness through technological innovation and transfer of its technical know-how to industry. To fulfil this mission, a very strong fundamental research is carried out in collaboration with academic partners and the Internal CEA Fundamental Research Division. CEA-Leti has also an active policy of start-up creation. CEA-Leti owns more than 1,880 patent families of which about 40% are licensed and depose around 350 patents per year. In 2012, the Silicon Division, which will carry out the activities in this project, produced 371 publications among which 101 in peer reviewed journals.

CEA-INAC: With 500 people in 6 laboratories, each a joint research unit with University Joseph Fourier, and some with CNRS and Grenoble-INP, INAC is a major player in basic research. INAC research focus are on nanoscience (70 %), on cryogenic technologies (15 %), on health and biosensors (9 %) and on correlated electron systems (superconductivity) (7 %). INAC develops strong activities in nano- and material characterization (synchrotron, neutrons, NMR and EPR, TEM, ions…) through internal or shared research centres and with INAC research groups located at ESRF and ILL. INAC has three major commitments: creating frontier science results in basic research (350 publications per year), taking care of valorizing opportunities of applications (through typ. 20 patents per year, startups and partnerships with applied research), training of first class scientists through PhDs (110 ongoing) and post docs (50 ongoing). In MOSQUITO, two members of the CNRS-NEEL institute will work in collaboration with CEA-INAC.

Main tasks in MOS-QUITO:
  • CMOS devices large scale fabrication and characterization
  • Quantum coherent electrical measurements
  • Simulations
Previous experience, skills and facilities relevant to the tasks in MOS-QUITO:
  • Expertise in CMOS  nanofabrication (MOSFETs and MOS-SETs ); State-of-the art nanofabrication facilities 300 mm process line
  • Expertise in ultrasensitive  microwave and DC electrical measurements at low temperature, high magnetic field, clean electromagnetic environment
  • Realistic ab-initio and NEGF simulation of CMOS devices (MOSFETs and MOS-SETs )
Key people

Dr. S. De Franceschi is an expert in quantum nanoelectronics and experimental mesoscopic physics. He received his PhD in 1999 at the Scuola Normale Superiore of Pisa and, since 2007, he has a position of staff scientist at the Institute for Nanoscience and Cryogenics. In 2005 he was awarded the Kurti European prize for his sustained achievements in the field of quantum transport and, in particular, his works on the Kondo effect in quantum dots and on hybrid normal/superconductor nanostructures. He has obtained several research grants, including a Junior Chair of Excellence Grant from the French Agency for Research (2007-2011), and European Starting Grant (2012-2017).

Dr. Marc Sanquer is the head of the Laboratory on Quantum Electronic Transport and Superconductivity (LaTEQS) at INAC. He completed his PhD in physics at the University of Paris-Sud-Orsay in 1985 and joined the Atomic Energy Council (CEA) at Saclay in the research staff, working on mesoscopic quantum physics since 1988. In 1996 he joined the INAC, where he focused on the electronic correlations – including Coulomb blockade- and interferences effects in quantum electronic systems. Since 1997 he developed collaboration with silicon microelectronics laboratories (CEALETI and STMicroelectronics) and oriented his research in the direction of ultimate CMOS devices which gives the opportunity to study new quantum effects in few electrons devices and to address directly the end of the ITRS roadmap. He is co-author of approx. 150 scientific publications. He has coordinated the FP7 project AFSiD, and currently he is coordinating the FP7 FET-OPEN project SiSPIN.

Dr. Yann-Michel Niquet graduated from ISEN, an electronic engineering school in Lille, France, in 1997. He also received a Master Degree in Physics from the University of Paris-Sud in 1997, and a PhD in Materials Science from the University of Lille in 2001. He joined the Institute for Nanosciences and Cryogenics (INAC) of the CEA Grenoble in 2003. He is leading research on the electronic and transport properties of semiconductor nanostructures, and is coordinating the development of the TB_Sim code, a platform for multi-scale modelling in nanosciences and nanotechnologies. TB_Sim has received in 2012 the third prize at the “Bull-Fourier” contest (High Performance Computing) for its performances on parallel and graphics cards machines. Yann-Michel Niquet has been involved in many national and European research projects [e.g., the EU project “NODE”]. He has published around 100 papers (2300 citations, h-index 27).

Dr. Louis Hutin received the joint International M.S. degree in micro and nanotechnologies from Grenoble Institute of Technology (France), Politecnico di Torino (Italy), and École Polytechnique Fédérale de Lausanne (Switzerland) in 2007, and the Ph.D. degree in micro and nanoelectronics from Grenoble Institute of Technology in 2010. From 2007 to 2010, his research at CEA-LETI (Grenoble, France) focused on high-mobility channel MOSFETs on advanced substrates and Schottky-junction transistors. He joined the University of California, Berkeley in 2010 as a Postdoctoral Researcher, where he worked towards the optimization and scaling of micro/nanoelectromechanical relays for ultralow-power digital logic and non-volatile memory circuits. He returned in 2013 to CEA-LETI as a Device Integration Engineer for Post-Si and Energy Efficient Beyond CMOS ICs.

Dr Tristan Meunier (CNRS/NEEL) (obtained his MS (2001) and PhD (2004) degrees at Ecole Normale Supérieure de Paris. He was awarded a Marie-Curie fellowship (2006-2007), which he spent in the Quantum Transport group, TU Delft, after which he was appointed Permanent Researcher at CNRS-Institut Néel (2008). His research interests and contributions are mainly in the field of coherent control of individual quantum objects. He studied systems in different research area such as atomic physics (CQED with Rydberg atoms), and solid-state physics (electron spin qubits in lateral quantum dots). In 2012, he received the Starting Grant of the European Research Council (ERC). He has authored 40 publications with more than 2000 citations.

Dr Christopher Bäuerle (CNRS/NEEL) received his B.S degree in 1990 from the University of Karlsruhe, Germany, his M.S. degree in 1992 from the University of Massachusetts, Amherst, USA and his PhD degree in 1996 from the University Joseph Fourier, Grenoble, France. After working for two years at the University of Tsukuba and the University of Tokyo, he joined the Néel Institute, CNRS – Grenoble where he currently leads a group on quantum transport together with Tristan Meunier. He has made significant contributions to the field of symmetry-breaking phase transition using ultra-cold superfluid 3He as a cosmology laboratory as well as in the understanding of the Kondo effect in metallic nanostructures. More recently his research interests focus on quantum devices with superconducting diamond as well as quantum transport at the single electron level. He is co-author of more than 80 publications in international peer-reviewed journals and 3 book chapters.